? semiconductor components industries, llc, 2006 august, 2006 ? rev. 1 1 publication order number: MBR40H100WT/d MBR40H100WT switchmode ? power rectifier 100 v, 40 a features and benefits ? low forward voltage ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 40 a total (20 a per diode leg) ? this is a pb ? free device applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 4.3 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds maximum ratings please see the table on the following page schottky barrier rectifier 40 amperes 100 volts 1 3 2, 4 http://onsemi.com to ? 247ac case 340l style 2 marking diagram b40h100 aywwg a = assembly location y = year ww = work week b40h100 = device code g= pb ? free package device package shipping ordering information MBR40H100WTg to ? 247 (pb ? free) 30 units/rail
MBR40H100WT http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current t c = 148 c, per diode t c = 150 c, per device i f(av) 20 40 a peak repetitive forward current (square wave, 20 khz) t c = 144 c i frm 40 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 200 a operating junction temperature (note 1) t j +175 c storage temperature t stg 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s controlled avalanche energy (see test conditions in figures 10 and 11) w aval 400 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristics maximum thermal resistance ? junction ? to ? case (min. pad) ? junction ? to ? ambient (min. pad) r jc r ja 2.0 60 c/w electrical characteristics characterisitc symbol min typ max unit instantaneous forward voltage (note 2) (i f = 20 a, t j = 25 c) (i f = 20 a, t j = 125 c) (i f = 40 a, t j = 25 c) (i f = 40 a, t j = 125 c) v f ? ? ? ? 0.74 0.61 0.85 0.72 0.80 0.67 0.90 0.76 v instantaneous reverse current (note 2) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r ? ? 2.0 0.0012 10 0.01 ma maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
MBR40H100WT http://onsemi.com 3 square wave dc dc 175 c 150 c 125 c 25 c i f , instantaneous forward current (a) figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) 1.0 0.1 0.4 0 0.2 1.0 0.8 0.6 i r , maximum reverse current (a) i r , reverse current (a) figure 3. typical reverse current figure 4. maximum reverse current 20 0 v r , reverse voltage (volts) 1.0e ? 01 1.0e ? 02 1.0e ? 03 1.0e ? 06 1.0e ? 08 40 t j = 125 c t j = 150 c t j = 25 c i f , average forward current (a) figure 5. current derating, case, per leg t c , case temperature ( c) 120 12 4.0 0 140 150 130 160 square wave dc i f(av) , average forward current (a) 50 0 t a , ambient temperature ( c) 20 2.0 0 25 figure 6. current derating, ambient, per leg 10 1.1 10 60 80 100 1.0e ? 07 1.0e ? 05 1.0e ? 04 20 0 v r , reverse voltage (volts) 1.0e ? 01 1.0e ? 02 1.0e ? 03 1.0e ? 06 1.0e ? 08 40 t j = 125 c t j = 150 c t j = 25 c 60 80 100 1.0e ? 07 1.0e ? 05 1.0e ? 04 170 180 i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) 1.0 0.1 0.4 0 0.2 1.0 0.8 0.6 1.2 10 4.0 6.0 8.0 12 14 16 75 20 100 100 32 28 16 18 100 125 175 150 0.3 0.1 0.9 0.7 0.5 175 c 150 c 125 c 25 c 0.3 0.1 0.9 0.7 0.5 1.1 8.0 24 r ja = 16 c/w r ja = 60 c/w no heatsink square wave
MBR40H100WT http://onsemi.com 4 c, capacitance (pf) 0 v r , reverse voltage (v) 100 10 40 80 t j = 25 c 10 0 20 60 10000 1000 p f(av) , average power dissipation (w) 12 0 i f(av) , average forward current (a) 30 4.0 0 4.0 8.0 square wave figure 7. forward power dissipation 16 8.0 12 20 dc 20 16 24 28 30 28 figure 8. capacitance 24 t j = 175 c r(t), transient thermal resistance figure 9. thermal response junction ? to ? case 1000 0.1 0.00001 t 1 , time (sec) 10 0.001 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
MBR40H100WT http://onsemi.com 5 mercury switch v d i d dut 10 mh coil +v dd i l s 1 bv dut i l i d v dd t 0 t 1 t 2 t figure 10. test circuit figure 11. current ? voltage waveforms the unclamped inductive switching circuit shown in figure 10 was used to demonstrate the controlled avalanche capability of this device. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total ener gy transferred is equal to the ener gy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). w aval 1 2 li 2 lpk bv dut bv dut ?v dd w aval 1 2 li 2 lpk equation (1): equation (2):
MBR40H100WT http://onsemi.com 6 package dimensions to ? 247 psi case 340l ? 02 issue d n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 2.20 2.60 0.087 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 20.06 20.83 0.790 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p ??? 4.50 ??? 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 2: pin 1. anode 2. cathode (s) 3. anode 2 4. cathodes (s) on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 MBR40H100WT/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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